Masaaki Nakayama, Dr.Sci.
Professor
Department of Applied Physics
Graduate School of Engineering
Osaka City University
3-3-138 Sugimoto, Sumiyoshi-ku,
Osaka 558-8585, JAPAN
(Email) nakayama@a-phys.eng.osaka-cu.ac.jp
(phone&fax) +81-6-6605-2739

Research Field: Optical properties and functions of condensed matter

Current Theme:

(1)   Optical properties and functions of semiconductor nanostructures such as superlattices, quantum wells, and quantum dots.

(2)   Excitonic processes in cuprous-halide and alkali-halide thin films grown by vacuum deposition and ZnO thin films grown by rf-magnetron sputtering.

(3)   Preparation of semiconductor microcavities and their optical properties.

Publication:

  1. Temperature dependence of the energy transfer of exciton states in bilayer structures of CdSe/ZnS quantum dots:
    D. Kim, K. Okazaki ,and M. Nakayama,
    Phys. Rev. B 80, 045322-1--045322-5 (2009).
  2. Characteristics of photoluminescence due to exciton-exciton scattering in GaAs/AlAs multiple quantum well:
    M. Nakayama T. Hirao, and T. Hasegawa,
    J. Appl. Phys. 105, 123525-1--123525-4 (2009).
  3. Effect of nitrogen incorporation on a direction of a surface band bending investigated by polarity of terahertz electromagnetic waves in GaAs1-xNx epitaxial layer:
    H. Takeuchi, J. Yanagisawa, J. Hashimoto, and M. Nakayama,
    J. Appl. Phys. 105, 093539-1--093539-2 (2009).
  4. Enhanced terahertz emission from coherent longitudinal optical phonons in a quantum well structure under applied bias:
    K. Mizoguchi, Y. Kanzawa, S. Saito, K. Sakai, and M. Nakayama,
    phys. stat. sol. (c) 6, 358-361 (2009).
  5. Experimental determination of exciton dispersion relation from center-of-mass quantization effect in PbI2 thin films:
    J. Hashimoto and M. Nakayama,
    phys. stat. sol. (c) 6, 358-361 (2009).
  6. Lattice-mismatch-strain effects on excitons in GaAs1-xNx/GaAs heterostructures:
    J. Hashimoto and M. Nakayama,
    phys. stat. sol. (c) 6, 358-361 (2009).
  7. Exciton polaritons in bulk CuCl microcavities grown by vacuum deposition:
    G. Oohata, T. Nishioka, D. Kim, H. Ishihara, and M. Nakayama,
    phys. stat. sol. (c) 6, 280-283 (2009).
  8. Pump-energy dependence of usual and unusual Bloch oscillations in a GaAs/AlAs superlattice:
    T. Hasegawa, K. Mizoguchi, and M. Nakayama,
    phys. stat. sol. (c) 6, 264-267 (2009).
  9. Photoluminescence dynamics of exciton-exciton scattering in a lightly alloyed InGaN thin film:
    M. Nakayama and K. Sakaguchi,
    Appl. Phys. Lett. 93, 261904-1--261904-3 (2008).
  10. Experimental verification of Forster energy transfer between semiconductor quantum dots:
    D. Kim, S. Okahara, Y. Shim, and M. Nakayama,
    Phys. Rev. B 78, 153301-1--153301-4 (2008).
  11. Observation of exciton polaritons in a ZnO microcavity with HfO2/SiO2 distributed Bragg reflectors:
    M. Nakayama, S. Komura, T. Kawase, and D. Kim,
    J. Phys. Soc. Jpn. 77, 093705-1--093705-4 (2008).
  12. Temperature dependence of photoluminescence dynamics in colloidal CdS quantum dots:
    D. Kim, T. Mishima, K. Tomihira, and M. Nakayama,
    J. Phys. Chem. C 112, 10668-10673 (2008).
  13. Highly efficient preparation of size-controlled CdS quantum dots with high photoluminescence yield:
    D. Kim, K. Tomihira, S. Okahara, and M. Nakayama,
    J. Crystal Growth 310, 4244-4247 (2008).
  14. High sensitivity of photoluminescence-excitation spectroscopy for probing effects of plasma-induced surface damages on carrier transport in AlxGa1-xN/GaN heterostructures:
    H. Takeuchi, T. Shirahama, Y. Yamamoto, Y. Kamo, T. Kunii, T. Oku, H. Tanaka, and M. Nakayama,
    phys. stat. sol. (c) 5, 1525-1528 (2008).
  15. Ultrafast photoluminescence dynamics in ZnO thin films under intense excitation conditions:
    H. Ichida, S. Wakaiki, K. Mizoguchi, D. Kim, Y. Kanematsu, and M. Nakayama,
    J. Lumin. 128, 1059-1061 (2008).
  16. Excitonic quantum beat at the mini-Brillouin-zone boundary in a GaAs/AlAs superlattice:
    T. Hasegawa, K. Mizoguchi, and M. Nakayama,
    J. Lumin. 128, 1056-1058 (2008).
  17. Enhancement of terahertz radiation from coherent optical phonons via impulsive interference of excitons in GaAs/AlAs multiple quantum wells:
    M. Nakayama, S. Itoh, K. Mizoguchi, S. Saito, K. Akahane, N. Yamamotoc, and K. Sakai,
    J. Lumin. 128, 1043-1045 (2008).
  18. Photoluminescence due to exciton-exciton scattering in a GaAs/AlAs multiple quantum well:
    T. Hirao, T. Hasegawa, andM. Nakayama,
    Appl. Phys. Express 128, 960-962 (2008).
  19. Generation of intense and monochromatic terahertz radiation from coherent longitudinal optical phonons in GaAs/AlAs multiple quantum wells at room temperature:
    M. Nakayama, S. Ito, K. Mizoguchi, S. Saito, and K. Sakai,
    Appl. Phys. Express 1, 012004-1--012004-3 (2008).
  20. Observation of the second-nearest-neighbor Bloch oscillation in a GaAs/AlAs superlattice:
    T. Hasegawa, K. Mizoguchi, and M. Nakayama,
    phys. stat. sol. (c) 5, 203-206 (2008).
  21. Transformation process from quantum beats of miniband excitons to Bloch oscillations in a GaAs/AlAs superlattice under applied electric fields:
    T. Hasegawa, K. Mizoguchi, and M. Nakayama,
    Phys. Rev. B 76, 115323-1--115323-6 (2007).
  22. Energy-relaxation dynamics of photogenerated excitons observed from time-resolved photoluminescence of exciton-exciton scattering in CuI thin films:
    H. Ichida, Y. Kanematsu, K. Mizoguchi, D. Kim, andM. Nakayama,
    Phys. Rev. B 76, 085417-1--085417-5 (2007).
  23. Photoluminescence-excitation spectroscopy as a highly sensitive probe for carrier transport processes affected by surface damages in AlxGa1-xN//GaN heterostructures:
    H. Takeuchi, T. Shirahama, Y. Yamamoto, Y. Kamo, T. Kunii, T. Oku, H. Tanaka, andM. Nakayama,
    J. Appl. Phys. 102, 043510--043510-8 (2007).
  24. Observation of biexciton-resonant hyper-parametric scattering in SiO2/CuCl layered structures:
    M. Nakayama, T. Nishioka, S.Wakaiki, G. Oohata, K. Mizoguchi, D. Kim, and K. Edamatsu,
    Jpn. J. Appl. Phys. 46, L234-L236 (2007).
  25. Self-assembled formation of ZnO hexagonal micropyramids with high luminescence efficiency:
    D. Kim, S. Wakaiki, S. Komura, and M. Nakayama,
    Appl. Phys. Lett. 90, 101918-1--101918-3 (2007).
  26. Photocurrent bistability in a GaAs/AlxGa1-xAs superlattice under resonant-coupling conditions of Wannier-Stark-localization states:
    T. Hasegawa and M. Nakayama,
    J. Appl. Phys. 101, 043512-1--043512-5 (2007).
  27. Terahertz radiation from coherent confined optical phonons in GaAs/AlAs multiple quantum wells:
    M. Nakayama, K. Mizoguchi, O. Kojima, T. Furuichi, A. Mizumoto, S. Saito, A. Shouji, and K. Sakai,
    phys. stat. sol. (a) 204, 518-521 (2007).
  28. Optical characterization of improvement of carrier localization in InGaAsN/GaAs single quantum wells by addition of Sb flux to interfaces:
    Y. Iguchi, T. Ishizuka, T. Yamada, S. Takagishi, K. Nomura, and M. Nakayama,
    J. Crystal Growth 298, 540-543 (2007).
  29. Optical properties of GaInNAs quantum wells on misoriented substrates grown by MOVPE:
    T. Ishizuka, H. Doi, T. Katsuyama, J. Hashimoto, and M. Nakayama,
    J. Crystal Growth 298, 116-120 (2007).
  30. High sensitivity of Franz-Keldysh oscillations in photoreflectance spectra for probing morphology in AlxGa1-xN/GaN heterostructures:
    H. Takeuchi, Y. Yamamoto, Y. Kamo, T. Kunii, T. Oku, S. Wakaiki, and M. Nakayama,
    Eur. Phys. J. Appl. Phys. 37, 119-122 (2007).
  31. Miniband-width effects on Wannier-Stark localization of the first and second quantized states in a GaAs/AlAs superlattice:
    T. Hasegawa and M. Nakayama,
    J. Lumin. 122-123, 841-843 (2007).
  32. Stretched exponential profiles of photoluminescence decays related to localized states in InGaAsN/GaAs single-quantum wells:
    M. Nakayama, Y. Iguchi, K. Nomura, J. Hashimoto, T. Yamada and S. Takagishi,
    J. Lumin. 122-123, 753-755 (2007).
  33. Photoluminescence dynamics of energy transfer between CdS quantum dots prepared by a colloidal method:
    K. Tomihira, D. Kim, and M. Nakayama,
    J. Lumin. 122-123, 471-473 (2007).
  34. Dynamical process of exciton-exciton scattering in CuI thin films:
    H. Ichida, T. Shimomura, K. Mizoguchi, D. Kim, Y. Kanematsu, and M. Nakayama,
    J. Lumin. 122-123, 396-398 (2007).
  35. Photoluminescence properties and energy transfer processes from excitons to Mn2+ ions in Mn2+-doped CdS quantum dots prepared by a reverse-micelle method:
    D. Kim, M. Miyamoto and M. Nakayama,
    J. Appl. Phys. 100, 094313-1--094313-6 (2006).
  36. Characterization of terahertz electromagnetic waves from coherent longitudinal optical phonons in GaAs/AlAs multiple quantum wells:
    K. Mizoguchi, A, Mizumoto, M. Nakayama, S. Saito, A. Shoji, K. Sakai, N. Yamamoto, and K. Akahane,
    J. Appl. Phys. 100, 103527-1--103527-7 (2006).
  37. Optical properties of ZnO thin films grown by an rf-magnetron sputtering method:
    S. Wakaiki, D. Kim, S. Komura, K. Mizoguchi, and M. Nakayama,
    phys. stat. sol. (c) 3, 3504-3507 (2006).
  38. Ultrafast photoluminescence dynamics of biexcitons in a CuCl thin film grown by vacuum deposition:
    M. Nakayama, S. Wakaiki, K. Mizoguchi, D. Kim, H. Ichida, and Y. Kanematsu,
    phys. stat. sol. (c) 3, 3464-3467 (2006).
  39. Photoluminescence due to inelastic scattering processes of excitons in a GaN thin film grown by metalorganic vapor phase epitax:
    H. Tanaka, M. Ando, T. Uemura, andM. Nakayama
    phys. stat. sol. (c) 3, 3312-3515 (2006).
  40. Center-of-mass quantization of excitons in PbI2 thin films grown by vacuum deposition
    M. Nakayama, D. Kim, and H. Ishihara,
    Phys. Rev. B 74, 073306-1--073306-4 (2006).
  41. Effects of a cap layer on built-in electric fields of AlGaN/GaN heterostructures non-destructively probed by Franz-Keldysh oscillations:
    H. Takeuchi, Y. Yamamoto, Y. Kamo, T. Oku, and M. Nakayama,
    Eur. Phys. J. B 52, 311-314 (2006).
  42. Photoluminescence and optical gain due to exciton-electron scattering in a high quality GaN thin film:
    M. Nakayama, H. Tanaka, M. Ando, and T. Uemura,
    Appl. Phys. Lett. 88, 031909-1--031909-3 (2006) .
  43. Photoluminescence properties peculiar to the Mn-related transition in a lightly alloyed ZnMnO thin film grown by pulsed laser deposition:
    M. Nakayama, H. Tanaka, K. Masuko, T. Fukushima, A. Ashida, and N. Fujimura,
    Appl. Phys. Lett. 88, 241908-1--241908-3 (2006).
  44. Temperature dependence of dynamical processes of photoluminescence from exciton-exciton scattering in CuI thin films:
    H. Ichida, K. Mizoguchi, D. Kim, Y. Kanematsua, and M. Nakayama,
    J. Lumin. 119-120, 457-461 (2006).
  45. Photoluminescence properties related to localized states in colloidal PbS quantum dots:
    D. Kim, T. Kuwabara, and M. Nakayama,
    J. Lumin. 119-120, 214-218 (2006).
  46. Electroreflectance observation of transformation processes of the first and second minibands to Wannier-Stark localization states in a GaAs/AlAs superlattice:
    T. Hasegawa and M. Nakayama,
    Jpn. J. Appl. Phys. 44, 8340-8344 (2005).
  47. Strong enhancement of band-edge photoluminescence in CdS quantum dots prepared by a reverse-micelle method:
    D. Kim, M. Miyamoto, T. Mishima, and M. Nakayama,
    J. Appl. Phys. 98, 083514-1--083514-4 (2005).
  48. Photoluminescence from exciton-exciton scattering in a lightly alloyed InGaN thin film under intense excitation conditions
    M. Nakayama, R. Kitano, M. Ando, and T. Uemura,
    Appl. Phys. Lett. 87, 092106-1--092106-3 (2005).
  49. Intense terahertz radiation from optical phonons in GaAs/AlAs multiple quantum wells:
    K. Mizoguchi, T. Furuichi, O. Kojima, M. Nakayama, S. Saito, A. Syouji, and K. Sakai,
    Appl. Phys. Lett. 87, 093102-1--093102-3 (2005).
  50. Photoluminescence dynamics of exciton-exciton scattering processes in CuI thin films:
    H. Ichida, Y. Kanematsu, T. Shimomura, K. Mizoguchi, D. Kim, and M. Nakayama,
    Phys. Rev. B 72, 045210-1--045210-6 (2005).
  51. Photovoltaic effects on Franz-Keldysh oscillations in photoreflectance spectra: Application to determination of surface Fermi level and surface recombination velocity in undoped GaAs/n-type GaAs epitaxial structures:
    H. Takeuchi, Y. Kamo, Y. Yamamoto, T. Oku, M. Tokuda, and M. Nakayama,
    J. Appl. Phys. 97, pp.063708-1--063708-16 (2005).
  52. Optical properties of high-quality ZnO thin films grown by a sputtering method:
    T. Shimomura, D. Kim, and M. Nakayama,
    J. Lumin. 112, pp.191-195 (2005).
  53. Scintillation properties of CsI:Na thin films from viewpoint of nanoparticle formation:
    M. Nakayama, K. Okuda, N. Ando, and H. Nishimura,
    J. Lumin. 112, pp.156-160 (2005).
  54. Photoluminescence properties of localized states caused by nitrogen alloying in a GaInNAs/GaAs single quantum well:
    K. Nomura, T. Yamada, Y. Iguchi, S. Takagishi, and M. Nakayama,
    J. Lumin. 112, pp.146-150 (2005).
  55. Characteristics of coupled mode of excitonic quantum beat and coherent longitudinal optical phonon in GaAs/AlAs multiple quantum wells:
    T. Furuichi, K. Mizoguchi, O. Kojima, K. Akahane, N. Yamamoto, N. Ohtani, and M. Nakayama,
    J. Lumin. 112, pp.142-145 (2005).
  56. Optical properties of ZnS-CdS alloy quantum dots prepared by a colloidal method:
    K. Tomihira, D. Kim, and M. Nakayama,
    J. Lumin. 112, pp.131-135 (2005).
  57. Intense coherent longitudinal optical phonons in CuI thin films under exciton-excitation conditions:
    O. Kojima, K. Mizoguchi, and M. Nakayama,
    J. Lumin. 112, pp.80-83 (2005).
  58. Preparation of ZnS-CdS alloy quantum dots by chemical synthetic methods and size-selective photoetching effects on size distribution:
    D. Kim, A. Nabeashima, and M. Nakayama,
    Jpn. J. Appl. Phys. 44, pp.1514-1517 (2005).
  59. Enhancement of coherent longitudinal optical phonon oscillations in a GaAs/AlAs multiple quantum well due to intersubband energy tuning under an electric field:
    O. Kojima, K. Mizoguchi, and M. Nakayama,
    Phys. Rev. B. 70, pp.233306-1--233306-4 (2004).
  60. Nondestructive determination of layers producing Franz-Keldysh oscillations appearing in photoreflectance spectra of heterojunctions bipolar transistor structures based on their line-shape analysis:
    H. Takeuchi, Y. Yamamoto, and M. Nakayama,
    J. Appl. Phys. 96, pp.1967-1974 (2004).
  61. Coupled mode of the coherent optical phonon and excitonic quantum beat in GaAs/AlAs multiple quantum wells:
    K. Mizoguchi, O. Kojima, T. Furuichi, M. Nakayama, K. Akahane, N. Yamamoto, and N. Ohtani,
    Phys. Rev. B. 69, pp.233302-1--233302-4 (2004).
  62. Stability of electron-hole plasma in type-I and type-II GaAs-GaAlAs single quantum wells:
    T. Ando, M. Nakayama, and M. Hosoda,
    Phys. Rev. B 69, 165316-1-165316-12 (2004).
  63. Scintillation activated by nanoparticle formation in CsI:Na thin films:
    M. Nakayama, N. Ando, J. Hirai, and H. Nishimura,
    J. Lumin. 108, pp.359-363 (2004).
  64. Enhancement of coherent LO phonons by quantum beats of excitons in GaAs/AlAs multiple quantum wells:
    O. Kojima, K. Mizoguchi, and M. Nakayama,
    J. Lumin. 108, pp.195-199 (2004).
  65. Line-shape analysis of Franz-Keldysh oscillations from a base-emitter junction in an InGaP/GaAs heterojunctions bipolar transistor structure:
    H. Takeuchi, Y. Yamamoto, R. Hattori, T. Ishikawa, and M. Nakayama,
    Physica E 21, pp.693-697 (2004).
  66. Umklapp processes in observation of coherent folded coherent longitudinal acoustic phonons in a GaAs/AlAs long-period superlattice:
    K. Mizoguchi, T. Hino, M. Nakayama, T. Dekorsy, A. Bartel, H. Kurz, and S. Nakashima,
    Physica E, 21, pp.641-650 (2004).
  67. Bose-Einstein statistics behavior of exciton-biexciton photoluminescence decay processes in a GaAs/AlAs type-II superlattice:
    M. Nakayama and H. Ichida,
    Physica E 21, pp.651-655 (2004).
  68. Effects of the dark-exciton state on photoluminescence dynamics in surface-modified CdS quantum dots prepared by a colloidal method:
    D. Kim, T. Mishima, and M. Nakayama,
    Physica E 21, pp.363-366 (2004).
  69. Resonant effects on coherent phonon generation in lead phthalocyanine crystalline films:
    K. Mizoguchi, S. Fujita, and M. Nakayama,
    Appl. Phys. A 47, pp.461-464 (2004).
  70. Interference effects on the phase of Franz-Keldysh oscillations in GaAs/AlAs heterostructures:
    H. Takeuchi, Y. Yamamoto, T. Hattori, T. Ishikawa, and M. Nakayama,
    Jpn. J. Appl. Phys. 42, pp.6772-6778 (2003).
  71. Localization characteristics of photoluminescence decay dynamics in an InGaAsN/GaAs single quantum wells:
    M. Nakayama, K. Tokuoka, K. Nomura, T. Yamda, A. Moto, and S. Takagishi,
    phys. Stat. sol. (b) 240, 352-355 (2003).
  72. Coupling of coherent longitudinal optical phonons to excitonic quantum beats in GaAs/AlAs multiple quantum wells:
    O. Kojima, K. Mizoguchi, and M. Nakayama,
    Phys. Rev. B 68, 155325-1-155325-6 (2003).
  73. Self-consistent calculation of subband occupation and electron-hole plasma effects:
    T. Ando, H. Taniyama, N. Ohtani, M. Nakayama, and M. Hosoda,.
    J. Appl. Phys. 94, pp.4489-4501 (2003).
  74. Photoluminescence properties of ZnO thin films grown by electrocjemical deposition:
    D. Kim, T. Terashita, I. Tanaka, and M. Nakayama.,
    Jpn. J. Appl. Phys. 42, pp.L935-L937 (2003).
  75. Role of the core excitons formed by 4f-4f transitions of Gd3+ on Ce3+ scintillation in Gd2SiO5:C3+
    K. Mori, M. Nakayama, and H. Nishimura,
    Phys. Rev. B 67, pp.165206-1-165206-7 (2003).
  76. Scintillation mechanism of Bi4Ge3O12:
    K. Mori, H. Nishimura, and M. Nakayama,
    Nonlinear Optics 29, pp. 609-613 (2002).
  77. Optical gain of stimulated emission due to exciton-exciton scattering processes in CuI thin films:
    I. Tanaka and M. Nakayama,
    Nonlinear Optics 29, pp. 507-512 (2002).
  78. Excitonic properties in PbI2 thin films grown by vacuum deposition:
    D. Kim, S. Uegaki, and M. Nakayama,
    Nonlinear Optics 29, pp. 391-396 (2002).
  79. Control of Bose-Einstein-statistics behavior of the exciton-biexciton system in a GaAs/AlAs type-II superlattice:
    H. Ichida and M. Nakayama,
    Nonlinear Optics 29, pp.230-209 (2002).
  80. Quantum statistics behavior of the exciton-biexciton system in GaAs/AlAs type-II superlattices:
    M. Nakayama and H. Ichida,
    Phase Transitions 75, pp.979-987 (2002).
  81. Dynamical properties of coherent plasmons coupled with LO phonons in an InAs/GaAs strained superlattice:
    K. Mizoguchi, H. Takeuchi and M. Nakayama,
    Phase Transitions 75, pp.895-902 (2002).
  82. Optoelectronic properties of oriented controlled lead phthalocyanine films:
    K. Mizoguchi, K. Mizui, D. Kim, and M. Nakayama,
    Jpn. J. Appl. Phys. 41, pp.6421-6425 (2002).
  83. Numerically stable and flexible method for solutions of Schrödinger equation with self-interaction of carriers in quantum wells:
    T. Ando, H. Taniyama, N. Ohtani, M. Hosoda, and M. Nakayama,
    IEEE J. Quantum Electronics 38, pp.1372-1383 (2002).
  84. Stimulated emission due to the inelastic scattering from the heavy-hole exciton to the light-hole exciton in CuI thin films:
    I. Tanaka and M. Nakayama,
    J. Appl. Phys. 92, pp.3511-3516 (2002).
  85. Self-narrowing and photoetching effects on the size-distribution of CdS quantum dots prepared by a reverse micelle method:
    D. Kim, N. Teratani, and M. Nakayama,
    Jpn. J. Appl. Phys. 41, pp.5064-5068 (2002).
  86. Photoluminescence from high G-electron subbands and intersubband electroluminescence using G-X carrier injection in a simple GaAs/AlAs superlattice:
    C. Domoto, T. Nishimura, N. Ohtani, K. Kuroyanagi, P.O. Vaccaro, T. Aida, and M. Nakayama,
    Jpn. J. Appl. Phys. 41, pp.5073-5077 (2002).
  87. Effects of a miniband structure on coherent LO phonon-plasmon coupled modes in an (InAs)1/(GaAs)30 strained-layer superlattice:
    H. Takeuchi, K. Mizoguchi, T. Aida, and M. Nakayama,
    Physica B 314, pp.422-426 (2002).
  88. Coherent folded acoustic phonons in GaAs/AlAs superlattices with limited periodicity:
    H. Takeuchi, K. Mizogucchi, T. Hino, and M. Nakayama,
    Physica B 316-317, pp.308-310 (2002).
  89. Scintillation from NaI nanoparticles formed in CsI:Na thin films:
    M. Nakayama, N. Ando, T. Miyoshi, J. Hirai, and H. Nishimura,
    Jpn. J. Appl. Phys. 41, pp.L263-L265 (2002).
  90. Finite-size effects on coherent folded acoustic phonons in GaAs/AlAs superlattices:
    K, Mizoguchi, H. Terauchi, T. Hino, and M. Nakayama,
    J. Phys.: Condens. Matter 14, pp.L103-L109 (2002).
  91. Quantum beats between heavy-hole and light-hole excitons in CuI thin films:
    I. Tanaka, K. Mizoguchi, and M. Nakayama,
    J. Lumin. 94-95, pp.385-388 (2001).
  92. Boson characteristics of the exciton-biexciton system in a GaAs/AlAs type-II superlattices:
    H. Ichida and M. Nakayama,
    J. Lumin. 94-95, pp.379-383 (2001).
  93. Transformation from biexcitons to electron-hole plasma in photoluminescence properties of a GaAs/AlAs multiple-quantum-well structures,
    H. Ichida, K. Tsuji, K. Mizoguchi, H. Nishimura, and M. Nakayama,
    Int. J. Modern. Phys. B 12, pp.3793-3796 (2001).
  94. Photo-irradiation effects on preparation of colloidal quantum dots and their surface modification:
    D. Kim, N. Teratani, K. Mizoguchi, H. Nishimura, and M. Nakayama,
    Int. J. Modern. Phys. B 12, pp.3825-3828 (2001).
  95. Scintillation mechanism of Ce3+ doped Gd2SiO5:
    K. Mori, M. Yokota, H. Nishimura, M. Nakayama, and H. Ishibashi,
    Int. J. Modern. Phys. B 12, pp.3877-3880 (2001).
  96. Control of temperature dependence of exciton energies in CuI-CuBr alloy thin films grown by vacuum deposition:
    I. Tanaka, K. Sugimoto, D. Kim, H. Nishimura, and M. Nakayama,
    Int. J. Modern. Phys. B 12, pp.3977-3980 (2001).
  97. Size-selective photoetching effects on preparation of semiconductor quantum dots with a uniform size:
    D. Kim, N. Taranani, K. Mizoguchi, and M. Nakayama,
    Trans. MRS Jpn. 26, pp.1287-1290 (2001).
  98. Simultaneous observation of coherent GaSb-like and AlSb-like longitudinal optical phonons in GaSb/AlSb superlattices:
    H. Takeuchi, K. Mizoguchi, M. Nakayama, K. Kuroyanagi, T. Aida, M. Nakajima, and H. Harima,
    J. Phys. Soc. Jpn. 70, pp.2596-2602 (2001).
  99. Evidence for quantum statistics of the exciton-biexciton system in a GaAs/AlAs type-II superlattice:
    H. Ichida and M. Nakayama,
    Phys. Rev. B 63, pp.195316-1-195316-6 (2001).
  100. Intersubband electroluminescence using X-ƒ‘ carrier injection in a GaAs/AlAs superlattice:
    C. Domoto, N. Ohtani, K. Kuroyanagi, P.O. Vaccaro, H. Takeuchi, and M. Nakayama,
    Appl. Phys. Lett. 77, pp.848-850 (2000).
  101. Photoluminescence and carrier transport properties via the intersubband scattering in a GaAs/AlAs superlattice:
    M. Ando, M. Nakayama, H. Takeuchi, H. Nishimura, N. Ohtani, N. Egami, M. Hosoda, and H. Mimura,
    J. Lumin. 87-89, pp.411-414 (2000).
  102. Dynamical aspects of the core excitons formed by the 4f-4f transitions of Gd3+ in Gd2SiO5:
    K. Mori, H. Nishimura, M. Nakayama, H. Ishibashi,
    J. Lumin. 87-89, pp.266-268 (2000).
  103. Photoluminescence from heavy-hole and light-hole excitons split by thermal strain in CuI thin films:
    I. Tanaka, D. Kim, M. Nakayama, and H. Nishimura,
    J. Lumin. 87-89, pp.257-259 (2000).
  104. Stimulated emission from exciton-exciton scattering in CuBr thin films:
    H. Ichida, M. Nakayama, and H. Nishimura,
    J. Lumin. 87-89, pp.235-237 (2000).
  105. Excitonic processes in GaAs/AlAs type-II superlattices: 
    M. Nakayama,
    J. Lumin. 87-89, pp.15-19 (2000).
  106. Oscillator strength of type-II light-hole exciton in InGaAs/GaAs strained single quantum wells:
    M. Nakayama, T. Nakanishi, H. Nishimura, M. Takahashi, and N. Egami,
    Physica E 7, pp.567-571 (2000).
  107. Observation of compositional fluctuation in GaNAs alloys grown by metalorganic vapor-phase epitaxy:
    M. Takahashi, A. Moto, S. Tanaka, S. Takagishi, M. Nakayama, K. Matsuda, and T. Saiki,
    J. Cryst. Growth 211, pp461-466 (2000).
  108. Electric-field-induced combination of Wannier-Stark localization and type-I-type-II crossover in a marginal type-I GaAs/AlAs superlattice:
    N. Ohtani, C. Domoto, N. Egami, H. Mimura, M. Ando, M. Nakayama, and M. Hosoda,
    Phys. Rev. B 61, pp.7505-7510 (2000).
  109. Light-hole Stark-ladder photoluminescence induced by heavy-hole|light-hole resonance in a GaAs/InAlAs superlattice:
    K. Kuroyanagi, N. Ohtani, N. Egami, K. Tominaga, M. Hosoda, H. Takeuchi, and M. Nakayama,
    Physica B 272, pp.198-201 (1999).
  110. Thermal-Strain-Induced Splitting of Heavy- and Light-Hole Exciton Energies in CuI Thin Films Grown by Vacuum Evaporation:
    D. Kim, M. Nakayama, O. Kojima, I. Tanaka, H. Ichida, and T. Nakanishi, and H. Nishimura,
    Phys. Rev. B 60, pp.13879-13884 (1999).
  111. Bound-biexciton photoluminescence in CuCl thin films grown by vacuum deposition:
    M. Nakayama, H. Ichida, and H. Nishimura,
    J. Phys.: Condens. Matter 11, pp.7653-7662 (1999).
  112. Observation of coherent folded acoustic phonons propagating in a GaAs/AlAs superlattice by two-color pump-probe spectroscopy:
    K. Mizoguchi, M. Hase, S. Nakashima, and M. Nakayama,
    Phys. Rev. B 60, pp.8262-8266 (1999).
  113. Coherent acoustic phonons in semiconductor superlattices:
    T. Dekorsy, A. Bartels, H. Kurtz, K. Mizoguchi, M. Nakayama, and K. Kohler,
    Phys. Stat. Sol. (b) 215, pp.425-430 (1999).
  114. Influence of strain effects on hole-subband resonances in GaAs/InAlAs superlattices:
    K. Kuroyanagi, N. Ohtani, N. Egami, K. Tominaga, and M. Nakayama,
    Appl. Surface Sci. 142, pp.533-636 (1999).
  115. Franz-Keldysh oscillations at the above-barrier miniband in a GaAs/AlxGa1-xAs superlattice:
    M. Ando, M. Nakayama, H. Nishimura, and K. Fujiwara,
    Superlattices and Microstruc. 25, pp.61-66 (1999).
  116. Study of coherent folded acoustic phonons in semiconductor superlattices by pump-probe technique:
    K. Mizoguchi, M. Hase, S. Nakashima, and M. Nakayama,
    Physica B 263-264, pp.48-50 (1999).
  117. Photoluminescence detection of the X-electron resonance in a GaAs/AlAs type-II superlattice:
    M. Nakayama, M. Ando, Y. Kumamoto, H. Nishimura, N. Ohtani, N. Egami, K. Fujiwara, M. Hosoda,
    Phys. Rev. B 58, pp.7216-7221 (1998).
  118. Resonance effect of coherent folded acoustic phonons generated by ultra-short pulses in GaAs/Alas superlattices:
    K. Mizoguchi, K. Matsutani, M. Hase, S. Nakashima, and M. Nakayama,
    Physica B 249-251, pp.887-890 (1998).
  119. Type-II biexcitons in GaAs/AlAs short-period superlattices:
    M. Nakayama, A. Soumura, and H. Nishimura,
    Physica E 2, pp.340-344 (1998).
  120. Real-time-space dynamics of zone-folded phonons in GaAs/AlAs superlattices:
    T. Mishina, Y. Iwazaki, Y. Masumoto, and M. Nakayama,
    Solid State Commun. 107, pp.281-284 (1998).
  121. Coherent dynamics of zone-folded acoustic phonons in GaAs/AlAs superlattices:
    T. Mishina, Y. Iwazaki, Y. Masumoto, and M. Nakayama,
    J. Lumin. 76&77, pp.564-566 (1998).
  122. Wavefunction delocalization of strongly-localized Stark-ladder states in a GaAs/AlAs superlattice:
    M. Ando, M. Nakayama, H. Nishimura, M. Hosoda, N. Ohtani, N. egami, and K. Fujiwara,
    Solid State Electronics 42, pp.1499-1503 (1998).
  123. Influence of ƒ‘-X resonance on photocurrent-voltage characteristics in GaAs/InAlAs strained superlattices:
    K. Kuroyanagi, N. Ohtani, N. Egami, K. Tominaga, and M. Nakayama,
    Jpn. J. Appl. Phys. 37, pp.1650-1653 (1998).
  124. Strain-induced splitting of heavy-hole and light-hole exciton energies in NaI thin films:
    H. Nishimura, K. Kitano, S. Kawase, and M. Nakayama,
    Phys. Rev. B 57, pp.2592-2596 (1998).
  125. Franz-Keldysh oscillations at the miniband edge in a GaAs/AlxGa1-xAs superlattice:
    M. Ando, M. Nakayama, H. Nishimura, H. Schneider, and K. Fujiwara,
    Superlattices and Microstruc. 22, pp.459-465 (1997).
  126. Photoluminescence from the barrier-X state in GaAs/InAlAs strained superlattices under applied bias voltages:
    K. Kuroyanagi, N. Ohtani, N. Egami, K. Tominaga, and M. Nakayama,
    Phys. Stat. Sol. (b) 204, pp.187-190 (1997).
  127. Coherent reflected pulses of exciton polaritons in multiple quantum wells at Brewsterfs-angle incidence:
    B.R. Hyun, T. Mishina, Y. Masumoto, and M. Nakayama,
    Phys. Rev. B 56, pp.R12780-R12783 (1997).
  128. Miniband structures and effective masses of GaAs/AlAs superlattices with ultra-thin AlAs layers:
    M. Nakayama, T. Nakanishi, K. Okajima, M. Ando, and H. Nishimura,
    Solid State Commun. 102, pp.803-807 (1997).
  129. Observation of ƒ‘-X resonances in type-I GaAs/AlAs semiconductor superlattices:
    M. Hosoda, H. Mimura, N. Ohtani, K. Tominaga, K. Fujita, T. Watanabe, H. Inomata, and M. Nakayama,
    Phys. Rev. B 55, pp.13689-13696 (1997).
  130. Excitons consisting of two- and three-dimensional particles:
    Z. S. Piao, M. Nakayama, and H, Nishimura,
    J. Phys. Soc. Jpn. 66, pp.1567-1568 (1997).
  131. Hot exciton in CuCl and CuBr crystalline thin fllms grown by vacuum deposition:
    M. Nakayama, A. Soumura, K. Hamasaki, H. Takeuchi, and H. Nishimura,
    Phys. Rev. B 55, pp.10099-10104 (1997).
  132. Observation of coherent acoustic phonons in Fibonacci superlattices:
    K. Mizoguchi, K. Matsutani, S. Nakashima, T. Dekorsy, H. Kurz, and M. Nakayama,
    Phys. Rev. B 55, pp.9336-9339 (1997).
  133. Influence of ƒ‘-X resonances on ƒ‘ground state electron occupation in type-I GaAs/AlAs superlattice:
    M. Hosoda, K. Tominaga, N. Ohtani, H. Mimura, and M. Nakayama,
    Appl. Phys. Lett. 70, pp.1581-1583 (1997).
  134. Polarization choices in exciton-biexciton system of GaAs quantum wells:
    S. Adachi, T. Miyashita, S. Takeyama, Y. Takagi, and M. Nakayama,
    Phys. Rev. B 55, pp.1654-1660 (1997).
  135. Dynamical processes of excitons under magnetic fields in GaAs/AlAs superlattices:
    T. Komatsu, E. Kawahata, T. Karasawa, I. Akai, V.F. Aguekian, M. Nakayama, K. Uchida, and N. Miura,
    J. Lumin. 66&67, pp.468-472 (1996).
  136. Hydrostatic pressure effects on the free and self-trapped exciton states in CsI:
    T. Tsujimoto, H. Nishimura, and M. Nakayama,
    Phys. Rev. B 54, pp.16579-16584 (1996).
  137. Binding energies and envelope functions of light-hole excitons in GaAs/InxGA1-xAs strained quantum wells:
    Z. S. Piao, M. Nakayama, and H. Nishimura,
    Phys. Rev. B 54, pp.10312-10315 (1996).
  138. Flexible approach to exciton binding energies in type-I and type-II quantum wells:
    Z. S. Piao, M. Nakayama, and H. Nishimura,
    Phys. Rev. B 53, pp.1485-1489 (1996).
  139. Pseudodirect biexcitons in GaAs/AlAs type-II superlattices:
    M. Nakayama, K. Suyama, and H. Nishimura,
    IL Nuovo Cimento, 17D, pp.1629-1633 (1995).
  140. Optical properties of RbI thin films grown from vapor phase onto alkali-halide and quartz substrates:
    H. Nishimura, T. Ohashi, S. Kawase, and M. Nakayama,
    J. Phys. Soc. Jpn. 61, pp. 3514-3521 (1995).
  141. Photoreflectance study of folded above-barrier states in (InAs)1/(GaAs)m strained-layer superlattices:
    M. Nakayama, T. Fujita, and H. Nishimura,
    Superlattices and Microstruc. 17, pp.31-34 (1995).
  142. Biexciton formation in GaAs/AlAs type-II superlattices under extremely low excitation powers:
    M. Nakayama, K. Suyama, and H. Nishimura,
    Phys. Rev. B 51, pp.7870-7873 (1995).
  143. Electric-field effects on above-barrier states in a GaAs/AlxGa1-xAs superlattice:
    M. Nakayama, M. Ando, I. Tanaka, H. Nishimura, H. Schneider, and K. Fujiwara,
    Phys. Rev. B 51, pp.4236-4241 (1995).
  144. Origin of the 4.1-eV luminescence in pure CsI scintillator:
    H. Nishimura, M. Sakata, T. Tsujimoto, and M. Nakayama,
    Phys. Rev. B 51, pp. 2167-2172 (1995).
  145. Electric-field dependence of oscillator strength of Stark-ladder transitions in a GaAs/AlAs superlattice:
    I. Tanaka, M. Nakayama, H. Nishimura, K. Kawashima, and K. Fujiwara,
    Solid State Commun. 91, pp. 385-388 (1994).
  146. Coherent oscillations of zone-folded phonon modes in GaAs/AlAs superlattices:
    A. Yamamoto, T. Mishina, Y. Masumoto, and M. Nakayama,
    Phys. Rev. Lett. 73, pp. 740-743 (1994).
  147. Effects of hydrostatic pressure on the self-trapped exciton luminescence in KI:
    H. Nishimura, T. Tsujimoto, M. Nakayama, T. Horiguchi, and M. Kobayashi,
    J. Phys. Soc. Jpn. 63, pp. 2818-2824 (1994).
  148. Spectral changes of the self-trapped exciton luminescence in RbI under hydrostatic pressure:
    H. Nishimura, T. Tsujimoto, M. Nakayama, S. Morita, and M. Kobayashi,
    J. Lumin. 62, 41-47 (1994).
  149. Effect of hydrostatic pressure on the self-trapped exciton luminescence in CsI:
    T. Tsujimoto, H. Nishimura, M. Nakayama, H. Kurisu, and T. Komatsu,
    J. Lumin. 60&61, pp.798-801 (1994).
  150. ƒ‘-X mixing effects on pseudodirect exciton transitions in GaAs/AlAs type-II superlattices:
    M. Nakayama, K. Imazawa, I. Tanaka, and H, Nishimura,
    Phys. Rev. B 49, pp.13564-13571 (1994).
  151. Resonant coupling between buried single-quantum-well and Wannier-Stark-localization states in a GaAs/AlAs superlattice:
    I. Tanaka, M. Nakayama, H. Nishimura, K. Kawashima, and K. Fujiwara,
    Solid State Electronics 37, pp.863-866 (1994).
  152. Effects of uniaxial stress on self-trapped excitons in RbI:
    H. Nishimura, T. Tsujimoto, S. Morimoto, and M. Nakayama,
    J. Lumin. 58, pp.247-249 (1994).
  153. Coherent oscillation of zone-folded phonons in GaAs-AlAs superlattices:
    A. Yamamoto, T. Mishina, Y. Masumoto, and M. Nakayama,
    J. Lumin. 58, pp.265-267 (1994).
  154. ƒ‘-X mixing effects on photoluminescence intensity in GaAs/AlAs type-II superlattices:
    M. Nakayama, K. Imazawa, I. Tanaka, and H, Nishimura,
    Solid State Commun. 88, pp.43-46 (1993).
  155. Critical electric field for Stark-ladder formation in a GaAs/AlAs superlattice:
    I. Tanaka, M. Nakayama, H. Nishimura, K. Kawashima, and K. Fujiwara,
    Phys. Rev. B 48, pp.2787-2790 (1993).
  156. Incident-photon energy dependence of Raman-scattering profiles by folded acoustic phonons in GaAs/AlAs superlattices:
    H. Kushibe, M. Nakayama, and M. Yokota,
    Phys. Rev. B 47, pp.9566-9571 (1993).
  157. Optical properties of (InAs)1/(GaAs)m strained-layer superlattices:
    M. Nakayama, T. Fujita, I. Tanaka, H. Nishimura, and H. Terauchi,
    Jpn. J. Appl. Phys. 32, Suppl. 32-1, pp.160-162 (1993).
  158. Hole-subband-order reversal in GaAs/InxAl1-xAs strained-layer superlattice investigated by photoreflectance spectroscopy:
    M. Nakayama, T. Doguchi, I. Tanaka, and H. Nishimura,
    Superlattices and Microstruc. 12, pp.333-336 (1992).
  159. Electroreflectance intensity for resonant coupling between Wannier-Stark localization in a GaAs/AlAs superlattices:
    I. Tanaka, M. Nakayama, H. Nishimura, K. Kawashima, and K. Fujiwara,
    Phys. Rev. B 46, pp.7656-7661 (1992).
  160. Photoreflectance study of hole-subband structures in GaAs/InxAl1-xAs strained-later superlattices:
    M. Nakayama, T. Doguchi, and H. Nishimura,
    J. Appl. Phys. 72, pp.2372-2376 (1992).
  161. Electroreflectance and transfer-matrix analysis of Stark-ladder transitions in a GaAs/AlAs superlattice:
    M. Nakayama, I. Tanaka, H. Nishimura, K. Kawashima, and K. Fujiwara,
    Surface. Sci. 267, pp.537-540 (1992).
  162. Electroreflectance detection of resonant coupling between Wannier-Stark localization states in a GaAs/AlAs superlattice:
    M. Nakayama, I. Tanaka, H. Nishimura, K. Kawashima, and K. Fujiwara,
    Phys. Rev. B 44, pp.5935-5938 (1991).
  163. Luminescence associated with self-trapped excitons in LiBr:
    K. Fujiwara, S. Nagata, H. Nishimura, M. Nakayama, T. Komatsu, and S. Hashimoto,
    J. Lumin. 48&49, pp.107-110 (1991).
  164. High sensitivity of electroreflectance to Stark-ladder transitions in a GaAs/AlAs superlattice:
    M. Nakayama, I. Tanaka, T. Doguchi, H. Nishimura, K. Kawashima, and K. Fujiwara,
    Solid State Commun. 77, pp.303-306 (1991).
  165. Interference effects on photoreflectance line shapes of excitons in GaAs/AlAs superlattices:
    M. Nakayama, I. Tanaka, T. Doguchi, and H. Nishimura,
    Jpn. J. Appl. Phys. 29, pp.L1760-L1762 (1990).
  166. Anisotropic properties of photoluminescence in a GaAs/AlAs type-II superlattice:
    M. Nakayama, I. Kimura, I. Tanaka, and H. Nishimura,
    Solid State Commun. 76, pp.217-220 (1990).
  167. Interface-phonon polaritons in GaAs/AlAs heterostructures:
    M. Nakayama, M. Ishida, and N. Sano,
    Surface Sci. 228, pp.131-134 (1990).
  168. Raman scattering in long-period superlattices of GaAs, AlAs, GaAlAs layers:
    S. Nakashima, K. Tahara, M. hangyo, and M. Nakayama,
    Phys. Rev. B 41, pp.5221-5226 (1990).
  169. Photoluminescence properties of GaAs/AlAs short-period superlattices:
    M. Nakayama, I. Tanaka, I. Kimura, and H. Nishimura,
    Jpn. J. Appl. Phys. 29, pp.41-47 (1990).
  170. The atomic diffusion process in Al-Mn superlattices examined by annealing treatments:
    Y. Nishihata, M. Nakayama, N. Sano, and H. Terauchi,
    J. Phys: Condens. Matter 1, pp.7803-7808 (1989).
  171. Anisotropy of quantum-size effects in (001)- and (111)-oriented GaAs/Al0.3Ga0.7As multiple quantum wells:
    M. Nakayama, I. Kimura, H. Nishimura, T. Komatsu, and Y. Kaifu,
    Solid State Commun. 71, pp.1137-1140 (1989).
  172. Photoluminescence spectra of (GaAs)12/(AlAs)12 superlattice under high pressure:
    K. Takarabe, S. Minomura, M. Nakayama, and H. Kato,
    J. Phys. Soc. Jpn. 58, pp.2242-2243 (1989).
  173. ƒ‘-X crossover in GaAs/AlAs superlattices:
    H. Kato, Y. Okada, M. Nakayama, and Y. Watanabe,
    Solid State Commun. 70, pp.535-539 (1989).
  174. Raman scattering by interface-phonon polaritons in a GaAs/AlAs heterostructures:
    M. Nakayama, M. Ishida, and N. Sano,
    Phys. Rev. B 38, pp.6348-6351 (1988).
  175. X-ray diffraction patterns of configurational Fibonacci lattices:
    H. Terauchi, Y. Noda, K. Kamigaki, S. Matsunaka, M. Nakayama, H. kato, N. Sano, and Y. Yamada,
    J. Phys. Soc. Jpn. 57, pp.2416-2424 (1988).
  176. Single crystals of Al-Mn superlattices grown by molecular-beam epitaxy:
    Y. Nishihata, M. Nakayama, N. Sano, and H. Terauchi,
    J. Appl. Phys. 63, pp.319-323 (1988).
  177. Intersubband transitions in GaAs-AlxGa1-xAs modulation-doped superlattices:
    M. Nakayama, H. Kuwahata, H. Kato , and K. Kubota.
    Appl. Phys. Lett. 51, pp.1741-1743 (1987).
  178. Growth and characterization of InAs/InxAl1-xAs strained-layer superlattices:
    H. Kato, N. Iguchi, K. Kamigaki, S. Chika, M. Nakayama, N. Sano, and H. Terachi,
    J. Appl. Phys. 62, pp.2057-2061 (1987).
  179. Folded acoustic phonons in (Al,Ga)As quasiperiodic superlattices:
    M. Nakayama, H. Kato, and S. Nakashima,
    Phys. Rev. B 36, pp.3472-3474 (1987).
  180. X-ray diffraction analysis of buffer layer effects on lattice distortions of strained layer superlattices:
    K. Kamigaki, H. Sakashita, H. Kato, M. Nakayama, N. Sano, and H. Terauchi,
    J. Appl. Phys. 62, pp.1124-1127 (1987).
  181. Structure of GaAs-In0.2Ga0.8As heterojunction interface studied by electron spectroscopies:
    M. Iwai, Y. Watanabe, H. Kato, M. Nakayama, and N. Sano,
    Thin Solid Films 141, pp.291-297 (1987).
  182. Single crystals of Nb-Ta superlattices grown by molecular-beam epitaxy:
    Y. Nishihata, M. Nakayama, H. kato, N. Sano, and H. Terauchi,
    J. Appl. Phys. 60, pp.3523-3526 (1986).
  183. Finite-size effects on Raman scattering from GaAs-AlAs superlattices:
    M. Nakayama, K. Kubota, H. Kato, and N. Sano,
    J. Appl. Phys. 60, pp.3589-3292 (1986).
  184. X-ray study of misfit strain relaxation in lattice-mismatched heterojunctions:
    K. Kamigaki, H. Sakashita, H. Kato, M. Nakayama, N. Sano, and H. Terauchi,
    Appl. Phys. Lett. 49, pp.1071-1073 (1986).
  185. Temperature dependence of molecular-beam epitaxial growth rates for InxGa1-xAs and InxAl1-xAs:
    S. Chika, H. Kato, M. Nakayama, and N. Sano,
    Jpn. J. Appl. Phys. 25, pp.1441-1442 (1986).
  186. Effective-mass reversal on InxAl1-xAs/GaAs strained-layer superlattices:
    H. Kato, N. Iguchi, S. Chika, M. Nakayama, N. Sano,
    Jpn. J. Appl. Phys. 25, pp.1327-1331 (1986).
  187. Lattice distortions in GaAs-AlAs and GaAs-InAs superlattices:
    H. Terauchi, K. Kamigaki, H. Sakashita, N. Sano, H. Kato, and M. Nakayama,
    Surface Sci. 174, pp.592-597 (1986).
  188. Raman scattering from GaAs-Al0.5GA0.5As-AlAs polytype superlattices:
    M. Nakayama, K. Kubota, S. Chika, H. Kato, N. Sano,
    Solid State Commun. 58, pp.475-477 (1986).
  189. Effects of buffer layers in GaAs- In0.2Al0.8As strained-layer superlattice
    M. Nakayama, K. Kubota, S. Chika, H. Kato, N. Sano,
    Appl. Phys. Lett. 48, pp.281-283 (1986).
  190. Photoluminescence study of InxAl1-xAs-GaAs strained-layer superlattices:
    H. Kato, N. Iguchi, S. Chika, M. Nakayama, N. Sano,
    J. Appl. Phys. 59, pp.588-592 (1986).
  191. Raman study of GaAs-InxAl1-xAs strained-layer superlattices:
    M. Nakayama, K. Kubota, T. Kanata, S. Chika, H. Kato, N. Sano,
    J. Appl. Phys. 58, pp.4342-4345 (1985).
  192. X-ray studies of semiconductor superlattices grown by molecular-beam epitaxy:
    H. Terauchi, S. Sekimoto, K. Kamigaki, H. Sakashita, N. Sano, H. Kato, and M. Nakayama,
    J. Phys. Soc. Jpn. 54, pp.4576-4585 (1985).
  193. Zone-folding effects on phonons in GaAs-AlAs superlattices:
    M. Nakayama, K. Kubota, T. Kanata, S. Chika, H. Kato, N. Sano,
    Jpn. J. Appl. Phys. 24, pp.1331-1334 (1985).
  194. Raman scattering from GaAs-AlAs monolayer-controlled superlattices:
    M. Nakayama, K. Kubota, S. Chika, H. Kato, N. Sano,
    Solid State Commun. 53, pp.493-495 (1985).
  195. X-ray study on impurity diffusion in a GaAs-AlAs superlattice:
    H. Terauchi, S. Sekimoto, S. Sano, H. Kato, and M. Nakayama,
    Appl. Phys. Lett. 44, pp.971-973 (1984).
  196. Raman scattering from GaAs-InxGa1-xAs strained-layer superlattices:
    M. Nakayama, K. Kubota, H. Kato, N. Sano,
    Solid State Commun. 51, pp.343-345 (1984).
  197. Mono- and Bi-layer superlattices of GaAs and AlAs:
    N. Sano, H. Kato, M. Nakayama, S. Chika, and H. Terauchi,
    Jpn. J. Appl. Phys. 23, pp.L640-L641 (1984).
  198. Characterization of GaAs-AlAs superlattices by laser-Raman spectroscopy:
    K. Kubota, M. Nakayama, H. Kato, and N. Sano,
    Solid State Commun. 49, pp.157-159 (1984).